Methods and apparatus for processing a substrate

ABSTRACT

Methods and apparatus for processing a substrate are provided herein. For example, a method includes supplying a vaporized precursor into a processing volume, supplying activated elements including ions and radicals from a remote plasma source, energizing the activated elements using RF source power at a first duty cycle to react with the vaporized precursor to deposit an SiNHx film onto a substrate disposed in the processing volume, supplying a first process gas from the remote plasma source while providing RF bias power at a second duty cycle different from the first duty cycle to the substrate support to convert the SiNHx film to an SiOx film, supplying a process gas mixture formed from a second process gas supplied from the remote plasma source and a third process gas supplied from the gas supply while providing RF bias power at the second duty cycle to the substrate support, and annealing the substrate.

FIELD

Embodiments of the present disclosure generally relate to methods andapparatus for processing a substrate, and more particularly, to methodand apparatus configured to form gap fill SiO film using in-situ plasmatreatments.

BACKGROUND

Conventional methods and apparatus for gap fill SiO film use steamprocesses and/or one or more multi-step processes to develop stable SiOfilm, e.g., to meet platform requirements. For example, some methods useone or more deposition methods (e.g., chemical vapor deposition, DEDfurnace, etc.) to deposit the SiO film, followed by one or more otherprocesses, such as, steam anneal or complex multi-step approach (e.g.,ultraviolet (UV) cure, chemical mechanical polish (CMP), plasmatreatment, etc.). Such methods, however, have structural issues (e.g.,line bending), provide poor gap fill (e.g.. porous (seams/voids)), canbe very complicated and expensive, have low throughput, and often exceedthermal budget.

SUMMARY

Methods and apparatus for processing a substrate are provided herein. Insome embodiments, a method for processing a substrate includes supplyinga vaporized precursor from a gas supply into a processing volume of aprocessing chamber, supplying activated elements including ions andradicals from a remote plasma source, energizing the activated elementsusing RF source power at a first duty cycle to react with the vaporizedprecursor to deposit an SiNH_(x) film onto a substrate supported on asubstrate support disposed in the processing volume, supplying a firstprocess gas from the remote plasma source while providing RF bias powerat a second duty cycle different from the first duty cycle to thesubstrate support to convert the SiNH_(x), film to an SiOx film,supplying a process gas mixture formed from a second process gassupplied from the remote plasma source and a third process gas suppliedfrom the gas supply while providing RF bias power at the second dutycycle to the substrate support, and annealing the substrate.

In accordance with at least some embodiments, a non-transitory computerreadable storage medium having stored thereon instructions that whenexecuted by a processor performs a method for processing a substrate.The method includes supplying a vaporized precursor from a gas supplyinto a processing volume of a processing chamber, supplying activatedelements including ions and radicals from a remote plasma source,energizing the activated elements using RF source power at a first dutycycle to react with the vaporized precursor to deposit an SiNH_(x) filmonto a substrate supported on a substrate support disposed in theprocessing volume, supplying a first process gas from the remote plasmasource while providing RF bias power at a second duty cycle differentfrom the first duty cycle to the substrate support to convert theSiNH_(x) film to an SiOx film, supplying a process gas mixture formedfrom a second process gas supplied from the remote plasma source and athird process gas supplied from the gas supply while providing RF biaspower at the second duty cycle to the substrate support, and annealingthe substrate.

In accordance with at least some embodiments, a chemical vapordeposition chamber for processing a substrate includes a substratesupport disposed in a processing volume of the chemical vapor depositionchamber, a remote plasma source coupled to the chemical vapor depositionchamber and configured to provide activated elements to a showerhead inthe processing volume, an RF source power coupled to the showerhead andconfigured to provide RF source power at a first duty cycle, an RF biaspower source coupled to the substrate support and configured to provideRF bias power at a second duty cycle different from the first duty cycleto the substrate support, a gas supply coupled to the chemical vapordeposition chamber and configured to supply process gas to theshowerhead disposed in the processing volume, and a controllerconfigured to supply a vaporized precursor from the gas supply into theprocessing volume of the chemical vapor deposition chamber, supplyactivated elements including ions and radicals from the remote plasmasource, energize the activated elements using RF source power at thefirst duty cycle to react with the vaporized precursor to deposit anSiNH_(x) film onto a substrate supportedl on the substrate supportdisposed in the processing volume, supply a first process gas from theremote plasma source while providing RF bias power at the second dutycycle to the substrate support to convert the SiNH_(x) film to an SiOxfilm, supply a process gas mixture formed from a second process gassupplied from the remote plasma source and a third process gas suppliedfrom the gas supply while providing RF bias power at the second dutycycle to the substrate support, and anneal the substrate.

Other and further embodiments of the present disclosure are describedbelow.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the present disclosure, briefly summarized above anddiscussed in greater detail below, can be understood by reference to theillustrative embodiments of the disclosure depicted in the appendeddrawings. However, the appended drawings illustrate only typicalembodiments of the disclosure and are therefore not to be consideredlimiting of scope, for the disclosure may admit to other equallyeffective embodiments.

-   -   FIG. 1 is a flowchart of a method of processing a substrate in        accordance with at least some embodiments of the present        disclosure.    -   FIG. 2 is a diagram of an apparatus in accordance with at least        some embodiments of the present disclosure.    -   FIG. 3 is a sectional diagram of a processing chamber in        accordance with at least some embodiments of the present        disclosure.

To facilitate understanding, identical reference numerals have beenused, where possible, to designate identical elements that are common tothe figures. The figures are not drawn to scale and may be simplifiedfor clarity, Elements and features of one embodiment may be beneficiallyincorporated in other embodiments without further recitation.

DETAILED DESCRIPTION

Embodiments of a methods and apparatus for processing a substrate areprovided herein. For example, methods and apparatus described herein usein-situ O₂-based treatment to convert SiNH_(x) to SiO_(x) bonds to formSiO network and densify SIO film in a deposition chamber. When comparedto conventional methods and apparatus, the methods and apparatusdescribed herein provide low cost and high throughput, e.g., due to aless number of chambers needed to convert and stabilize SiO film, uselow temperature SiO conversion to improve flowability and avoidvoid/conformality issues, and provide film composition tunability byvarying treatment conditions.

-   -   FIG. 1 is a flowchart of a method 100 for processing a        substrate, and FIG. 2 is a tool 200 (or apparatus) that can used        for carrying out the method 100, in accordance with at least        some embodiments of the present disclosure.

The method 100 may be performed in the tool 200 including any suitableprocessing chambers configured for one or more of physical vapordeposition (PVD), chemical vapor deposition (CVD), such asplasma-enhanced CVD (PECVD), flowable CVD (FCVD), and/or atomic layerdeposition (ALD), such as plasma-enhanced ALD (PEALD) or thermal ALD(e.g., no plasma formation), anneal chambers, pre-clean chambers, wetetch of dry etch chambers, or CMP chambers. Exemplary processing systemsthat may be used to perform the inventive methods disclosed herein arecommercially available from Applied Materials, Inc., of Santa Clara,California. Other processing chambers, including those from othermanufacturers, may also be suitably used in connection with theteachings provided herein.

The tool 200 can be embodied in individual processing chambers that maybe provided in a standalone configuration or as part of a cluster tool,for example, an integrated described below with respect to FIG. 2.Examples of the integrated tool are available from Applied Materials,Inc., of Santa Clara, California. The methods described herein may bepracticed using other cluster tools having suitable processing chamberscoupled thereto, or in other suitable processing chambers. For example,in some embodiments, the inventive methods may be performed in anintegrated tool such that there are limited or no vacuum breaks betweenprocessing steps. For example, reduced vacuum breaks may limit orprevent contamination (e.g., oxidation) of portions of a substrate.

The integrated tool includes a processing platform 201 (vacuum-tightprocessing platform), a factory interface 204, and a controller 202. Theprocessing platform 201 comprises multiple processing chambers, such as214A, 214B, 214C, and 2140 operatively coupled to a transfer chamber 203(vacuum substrate transfer chamber). The factory interface 204 isoperatively coupled to the transfer chamber 203 by one or more load lockchambers (two load lock chambers, such as 206A and 2068 shown in FIG.2).

In some embodiments, the factory interface 204 comprises a dockingstation 207, a factory interface robot 238 to facilitate the transfer ofone or more semiconductor substrates (wafers). The docking station 207is configured to accept one or more front opening unified pod (FOUP).Four FOUPS, such as 205A, 2058, 205C, and 2050 are shown in theembodiment of FIG. 2. The factory interface robot 238 is configured totransfer the substrates from the factory interface 204 to the processingplatform 201 through the load lock chambers, such as 206A and 2068. Eachof the load lock chambers 206A and 2068 have a first port coupled to thefactory interface 204 and a second port coupled to the transfer chamber203. The load lock chamber 206A and 2068 are coupled to a pressurecontrol system (not shown) which pumps down and vents the load lockchambers 206A and 2068 to facilitate passing the substrates between thevacuum environment of the transfer chamber 203 and the substantiallyambient (e.g., atmospheric) environment of the factory interface 204.The transfer chamber 203 has a vacuum robot 242 disposed within thetransfer chamber 203. The vacuum robot 242 is capable of transferringsubstrates 221 between the load lock chamber 206A and 206B and theprocessing chambers 214A, 2148, 214C, and 214D.

In some embodiments, the processing chambers 214A, 2148, 214C, and 214D,are coupled to the transfer chamber 203. The processing chambers 214A,214B, 214C, and 214D comprise at least an ALD chamber, a CVD chamber, aPVD chamber, an e-beam deposition chamber, an electroplating,electroless (EEP) deposition chamber, a pre-clean chamber, a wet etchchamber, a dry etch chamber, an anneal chamber, and/or other chambersuitable for performing the methods described herein.

In some embodiments, one or more optional service chambers (shown as216A and 216B) may be coupled to the transfer chamber 203. The servicechambers 216A and 216B may be configured to perform other substrateprocesses, such as degassing, bonding, chemical mechanical polishing(CMP), wafer cleaving, etching, plasma dicing, orientation, substratemetrology, cool down and the like.

The controller 202 controls the operation of the tool 200 using a directcontrol of the processing chambers 214A, 214B, 214C, and 214D oralternatively, by controlling the computers (or controllers) associatedwith the processing chambers 214A, 214B, 214C, and 214D and the tool200. In operation, the controller 202 enables data collection andfeedback from the respective chambers and systems to optimizeperformance of the tool 200. The controller 202 generally includes acentral processing unit 230, a memory 234, and a support circuit 232.The central processing unit 230 may be any form of a general-purposecomputer processor that can be used in an industrial setting. Thesupport circuit 232 is conventionally coupled to the central processingunit 230 and may comprise a cache, clock circuits, input/outputsubsystems. power supplies, and the like. Software routines, such asprocessing methods as described above may be stored in the memory 234(e.g., non-transitory computer readable storage medium havinginstructions stored thereon) and, when executed by the centralprocessing unit 230, transform the central processing unit 230 into acontroller (specific purpose computer). The software routines may alsobe stored and/or executed by a second controller (not shown) that islocated remotely from the tool 200.

FIG. 3 is a sectional diagram of a processing chamber 300 in accordancewith at least some embodiments of the present disclosure. The processingchamber 300 can one of the individual processing chamber of the tool200. For example, the processing chamber 300 can be configured toperform one or more plasma deposition processes. In at least someembodiments, the processing chamber 300 can be configured to performPECVD and/or ALD. Suitable processing chambers that may be adapted foruse with the teachings disclosed herein include, for example, processingchambers available from Applied Materials, Inc. of Santa Clara, CA.

The processing chamber 300 includes a chamber body 302 and a lid 304which enclose a processing volume 306. The chamber body 302 is typicallyfabricated from aluminum, stainless steel or other suitable material.The chamber body 302 generally includes sidewalls 308 and a bottom 310.A substrate support access port (not shown) is generally defined in asidewall 308 and is selectively sealed by a slit valve to facilitateentry and egress of a substrate 303 from the processing chamber 300. Anexhaust port 326 is defined in the chamber body 302 and couples theprocessing volume 306 to a pump system 328, which can also function as apurge station. The pump system 328 generally includes one or more pumpsand throttle valves utilized to evacuate and regulate the pressure ofthe processing volume 306 of the processing chamber 300. In embodiments,the pump system 328 is configured to maintain the pressure inside theprocessing volume 306 at operating pressures typically between about 1mTorr to about 500 mTorr, between about 5 mTorr to about 100 mTorr,between about 5 mTorr to about 50 mTorr, or between 10 mTorr to about 5Torr, depending upon process needs.

In some embodiments, the processing chamber 300 may utilize capacitivelycoupled RF energy for plasma processing, or in some embodiments,processing chamber 300 may use inductively coupled RF energy for plasmaprocessing. In some embodiments, a remote plasma source 377 (e.g.,microwave) may be optionally coupled to a gas panel to facilitatedissociating gas mixture from a remote plasma prior to entering theprocessing volume 306 for processing or for a cleaning the processingchamber 300 between processes. The remote plasma source 377 can supplyactivated elements (e.g., ions, radicals, or neutrals) to the processingchamber 300. For example, in at least some embodiments, the activatedelements can be formed from at least one of ammonia, argon, oxygen (O₂),helium. For example, in at least some embodiments, the activatedelements can be ammonia radicals or argon ions.

An RF source power 343 is coupled through a matching network 341 to theshowerhead assembly 330. The RF source power 343 typically can produceup to about 5000 W, for example between about 100 W to about 5000 W, orbetween 1000 W to 3000 W, or about 1500 W and optionally at a tunablefrequency in a range from about 50 kHz to about 200 MHz, e.g., 13,56MHz, The RF source power 343 can operate at a duty cycle (e.g., a firstduty cycle) during processing, The duty cycle can be about 10% forpulsed to about 100% for continuous.

A gas panel 358 is coupled to the processing chamber 300 and includesone or more mass flow controllers 357 to provide one or more processand/or cleaning gases to the processing volume 306. Inlet ports 332′,332″, 332″ are provided in the lid 304 to allow gases to be deliveredfrom the gas panel 358 to the processing volume 306 of the processingchamber 300. In embodiments, the gas panel 358 is adapted to provideoxygen (O₂), an inert gas such as argon, helium (or other noble gas),nitrogen (N₂), hydrogen (H₂) or a gas mixture such as carbontetrafluoride (CF₄), octafluorocyclobutane or perfluorocyclobutane(C₄F₈), trifluoromethane (CHF₃), sulfur hexafluoride (SF₆), silicontetrafluoride or tetrafluorosilane (SiF₄), a precursor, such astrisilylamine (TSA), etc., through the inlet ports 332′, 332″, 332″ andinto the interior volume 306 of the processing chamber 300. In at leastsome embodiments, the process gas provided from the gas panel 358includes at least a process gas including an oxidizing agent such asoxygen gas. In embodiments, the process gas including an oxidizing agentmay further comprise an inert gas such as argon or helium. In someembodiments, the process gas includes a reducing agent such as hydrogenand may be mixed with an inert gas such as argon, or other gases such asnitrogen or helium. In some embodiments, a chlorine gas may be providedalone, or in combination with at least one of nitrogen, helium an inertgas such as argon. Non-limiting examples of oxygen containing gasincludes one or more of O₂, carbon dioxide (CO₂), H₂O, nitrous oxide(N₂O), nitrogen dioxide (NO₂), ozone (O₃), and the like. Non-limitingexamples of nitrogen containing gas includes N₂, ammonia (NH₃), and thelike, Non-limiting examples of chlorine containing gas includes hydrogenchloride (HCl), chlorine (Cl₂), carbon tetrachloride (CCl₄), and thelike In embodiments, a showerhead assembly 330 is coupled to an interiorsurface 314 of the lid 304. The showerhead assembly 330 includes aplurality of apertures that allow the gases flowing through theshowerhead assembly 330 from the inlet ports 332′, 332″, 332″ into theprocessing volume 106 of the processing chamber 100 in a predefineddistribution across the surface of the substrate 303 (e.g., center,middle, side) being processed in the processing chamber 300.

In one embodiment, the showerhead assembly 330 is configured with aplurality of zones that allow for separate control of gas flowing intothe processing volume 306 of the processing chamber 300. The showerheadassembly 330 comprises a top delivery gas nozzle 335 that is configuredto direct the process gas toward a substrate support surface of thesubstrate support 348. Accordingly, the top delivery gas nozzle 335includes a center flow outlet 334 configured for center flow control anda middle flow outlet 336 configured for middle flow control that areseparately coupled to the gas panel 358 through inlet ports 332′, 332″.Additionally, one or more side delivery gas nozzles can extend throughthe chamber body 302 and can be configured to direct the process gastoward a side surface of the substrate support 348. For example, in atleast some embodiments, a side delivery gas nozzle 333 can include sideflow outlets 337 configured for side flow control that is separatelycoupled to the gas panel 358 through the inlet port 332′. Unlike thecenter flow outlet 334 and the middle flow outlet 336 which are disposedon the lid 304, the side flow outlets 337 are disposed along an interiorof the sidewalls 308 of the processing chamber in a generally circularmanner. The center flow outlet 334 and the middle flow outlet 336 areconfigured to provide process gas to substantially etch a center zoneand a middle zone (e.g., between the center and an edge) of a substrate,and the side flow outlets 337 that are disposed along are configured toprovide process gas to substantially etch an edge area (or perimeter) ofa substrate.

The substrate support 348 is disposed in the processing volume 306 ofthe processing chamber 300 below the gas distribution assembly such asshowerhead assembly 330. For example, the substrate support 348 can bedisposed below the showerhead assembly 330 such that a substrate isabout 3 inches below the showerhead assembly 330. The substrate support348 holds the substrate 303 during processing. The substrate support 348generally includes a plurality of lift pins (not shown) disposedtherethrough that are configured to lift the substrate 303 from thesubstrate support 348 and facilitate exchange of the substrate 303 witha robot (not shown) in a conventional manner. An inner liner 318 mayclosely circumscribe the periphery of the substrate support 348.

The substrate support 348 includes a mounting plate 362, a base 364 andan electrostatic chuck 366. The mounting plate 362 is coupled to thebottom 310 of the chamber body 302 includes passages for routingutilities, such as fluids, power lines and sensor leads, among others,to the base 364 and the electrostatic chuck 366. The electrostatic chuck366 comprises the clamping electrode 380 for retaining the substrate 33below showerhead assembly 330. The electrostatic chuck 366 is driven bya chucking power source 382 to develop an electrostatic force that holdsthe substrate 303 to the chuck surface, as is conventionally known.Alternatively, the substrate 303 may be retained to the substratesupport 348 by clamping, vacuum, or gravity. In at least someembodiments the substrate support 348 call be rotatable.

A base 364 or electrostatic chuck 366 may include heater 376 (e.g., atleast one optional embedded heater), at least one optional embeddedisolator 374 and a plurality of conduits 368, 370 to control the lateraltemperature profile of the substrate support 348. The plurality ofconduits 368, 370 are fluidly coupled to a fluid source 372 thatcirculates a temperature regulating fluid therethrough. The heater 376is regulated by a power source 378. The plurality of conduits 368, 370and heater 376 are utilized to control the temperature of the base 364,heating and/or cooling the electrostatic chuck 366 and ultimately, thetemperature profile of the substrate 303 disposed thereon. Thetemperature of the electrostatic chuck 366 and the base 364 may bemonitored using a plurality of temperature sensors 390, 392. Theelectrostatic chuck 366 may further include a plurality of gas passages(not shown), such as grooves, that are formed in a substrate supportpedestal supporting surface of the electrostatic chuck 366 and fluidlycoupled to a source of a heat transfer (or backside) gas, such as helium(He). In operation, the backside gas is provided at controlled pressureinto the gas passages to enhance the heat transfer between theelectrostatic chuck 366 and the substrate 303. In embodiments, thetemperature of the substrate may be maintained at about −20° C. to about450° C. For example, in at least some embodiments, the substrate may bemaintained at about −20° C. to about 90° C.

The substrate support 348 is configured as a cathode and includes aclamping electrode 380 that is coupled to the RF bias power source 384and RF bias power source 386. The RF bias power source 384 and RF biaspower source 386 are coupled between the clamping electrode 380 disposedin the substrate support 348 and another electrode, such as theshowerhead assembly 330 or (lid 304) of the chamber body 302. The RFbias power excites and sustains a plasma discharge formed from the gasesdisposed in the pr sing region of the chamber body 302.

The RF bias power source 384 and RF bias power source 386 are coupled tothe clamping electrode 380 disposed in the substrate support 348 througha matching circuit 388. The signal generated by the RF bias power source384 and RF bias power source 386 is delivered through matching circuit388 to the substrate support 348 through a single feed to ionize the gasmixture provided in the plasma processing chamber such as processingchamber 300, thus providing ion energy necessary for performing an etch,deposition or other plasma enhanced process. The RF bias power source384 and RF bias power source 386 are generally capable of producing anRF signal having a frequency of from about 50 kHz to about 200 MHz(e.g., 2 MHz) and a power between about 0 Watts and about 2500 Watts. Anadditional bias power 389 may be coupled to the clamping electrode 380to control the characteristics of the plasma. Additionally, the RF biaspower source 384 and the RF bias power source 386 can operate at a dutycycle (e.g., a second duty cycle) that is much less than a duty cyclethat the RF source power 343 operates at. For example, the RF bias powersource 384 and the RF bias power source 386 can operate at a duty cycleof about 0.1% to about 20%. In at least some embodiments, an on time ofthe duty cycle of the RF bias power source 384 and the RF bias powersource 386 has pulsing frequency of about 1 Hz to about 20 Hz.

A controller 350 (e.g., similar to the controller 202) is coupled to theprocessing chamber 300 to control operation of the processing chamber300. The controller 350 includes a central processing unit 352, a memory354 (e.g., a nontransitory computer readable storage medium), and asupport circuit 356 utilized to control the process sequence andregulate the gas flows from the gas panel 358. The central processingunit 352 may be any form of general-purpose computer processor that maybe used in an industrial setting. The software routines (e.g.,executable instructions stored) can be stored in the memory 354, such asrandom-access memory, read only memory, floppy, or hard disk drive, orother form of digital storage. The support circuit 356 is conventionallycoupled to the central processing unit 352 and may include cache, clockcircuits, input/output systems, power supplies, and the like.Bi-directional communications between the controller 350 and the variouscomponents of the processing chamber 300 are handled through numeroussignal cables.

Continuing with reference to FIG. 1, at 102, the method 100 comprisessupplying a vaporized precursor from a gas supply into a processingvolume of a processing chamber. For example, the gas panel 358 cansupply one or more vaporized precursors into the processing volume 306of the processing chamber 300 (e.g., one of the processing chambers214A-214D) to deposit (develop) gap fill film (e.g., a flowable siliconfilm, such as SiO_(x)) on a substrate (e.g., the substrate 303). In atleast some embodiments, the gas panel 358 can supply a vaporizedprecursor comprising trisilylamine (TSA) to form a siliazane-like film(SiNH_(x)).

Next, at 104, the method 100 comprises supplying activated elementsincluding ions and radicals from a remote plasma source. For example,the remote plasma source 377 can supply one or more activated elementsincluding argon, hydrogen (H₂), ammonia (NH₃), and/or oxygen (O₂). Forexample, in at least some embodiments, the activated elements caninclude at least one of ammonia radicals (NH_(x)), H₂ radicals, andargon ions.

Next, at 106, the method 100 comprises energizing the activated elementsusing RF source power at a first duty cycle to react with the vaporizedprecursor to deposit a film onto a substrate supported on a substratesupport disposed in the processing volume. For example, the ammoniaradicals can be energized via argon ions (e.g., from the remote plasmasource) and caused to react with the vaporized precursor (e.g., TSA).The reaction between the ammonia radicals and the vaporized precursordeposits a flowabie polysilazane-based film (SiNHx) onto the substrate.During 106, the RF source power 343 can be about 100 W to about 5000 W.For example, in at least some embodiments, the RF source power 343 canbe about 100 W and at a tunable frequency in a range from about 50 kHzto about 200 MHz (e.g., 13.56 MHz). Additionally, the RF source power343 can operate at a duty cycle of about 10% for pulsed to about 100%for continuous. Moreover, at 106 a temperature of the substrate can bemaintained at about −20° C. to about 90° C. In at least someembodiments, the temperature of the substrate can be maintained at about20° C., e.g., about room temperature. Furthermore, at 106 a pressurewithin the processing volume of the processing chamber can be aintainedat a pressure of about 10 mTorr to 5 Torr.

Next, at 108, the method 100 comprises supplying a first process gasfrom the remote plasma source while providing RF bias power at a secondduty cycle different from the first duty cycle to the substrate support.For example, the remote plasma source 377 can supply one or more oxygencontaining gases to the processing volume 306 of the processing chamber300. In at least some embodiments, the one or more oxygen containinggases can be O₂. The O₂ can be supplied into the processing volume 306to convert the SiNHx to SiOx, e.g., forming SiOx networks on asubstrate. Additionally, at 108 the RF bias power source 384 can operateat a duty cycle of about 0.1% to about 20%, can operate at a power levelof about 500 W to about 2500 W (e.g., about 2000 W), and at a pulsingfrequency of about 1 Hz to about 20 Hz. At 108, the RF source power andthe RF bias power can be provided simultaneously to the showerhead 330(or the lid 304) and to the substrate support 348, respectively.

Next, at 110, the method 100 comprises supplying a process gas mixtureformed from a second process gas supplied from the remote plasma sourceand a third process gas supplied from the gas supply while providing RFbias power at the second duty cycle to the substrate support. Forexample, the remote plasma source 377 can supply one or more inert(noble) gases. in at least some embodiments, the remote plasma source377 can supply argon. Similarly, the gas panel 358 can also supply oneor more inert gases. In at least some embodiments, the gas panel 358 cansupply helium. Alternatively or additionally, each of the remote plasmasource 377 and the gas panel 358 can be configured to supply both thesecond process gas and the third process gas. Other inert gases can alsobe used. The inventors have found that by supplying the gas mixture at110 while simultaneously providing RF source power at a first duty cycleto showerhead and RF bias power at the second duty cycle to thesubstrate support facilitates SiOx film densification and stabilization,which helps the SiOx film withstand post deposition hightemperature/pressure anneal processes, as described below. In at leastsome embodiments, one or more additional gases may also be providedduring 108 and 110. For example, one or more hydrogen containing gasescan be provided. In at least some embodiments, H₂ can be provided whilethe O₂ is supplied at 108 and/or while the process gas mixture issupplied at 110.

In at least some embodiments, the RF source power and the RF bias powercan be provided sequentially in a closed looped gas process scheme, Forexample, in at least some embodiments, after 110, 102-110 can berepeated (e.g., in a cyclic mode) as necessary until a desired thicknessof the SiOx film is achieved. To that end, process parameters, such asthickness per cycle and treatment conditions (e.g., source/bias power,pulsing frequency, duty cycle, process gas, temperature, pressure,on-time, etc.), can be varied to tune SiOx film composition. Moreover,to facilitate obtaining a uniform SiOx film, the substrate support 348can be rotated during any of 102-110. For example, during 108 and 110the substrate support 348 can be rotated.

The SiOx film quality can be further improved by a hightemperature/pressure anneal that helps to increase the refractive indexand reduce a hydrogen content throughout a full thickness of the SiOxfilm. Accordingly, at 112, the method 100 comprises annealing thesubstrate. For example, after 110, the vacuum robot 242 disposed withinthe transfer chamber 203 of the tool 200 can transfer the substrate 303from the processing chamber 300 (e.g., the processing chamber 214A) toone or more of the other processing chambers (e.g., the processingchamber 214B) to anneal the substrate. In at least some embodiments,annealing the substrate comprises maintaining the substrate at atemperature of about 500° C., maintaining a processing volume of theprocessing chamber 214B at a pressure of about 10 mTorr to about 37500Torr (70 Bar), and supplying one or more process gases. e.g., Ar, CO₂,D₂, H₂, N₂, and O₂, to the processing volume during annealing.

While the foregoing is directed to embodiments of the presentdisclosure, other and further embodiments of the disclosure may bedevised without departing from the basic scope thereof. Claims:

1. A method for processing a substrate, comprising: supplying avaporized precursor from a gas supply into a processing volume of aprocessing chamber; supplying activated elements including ions andradicals from a remote plasma source; energizing the activated elementsusing RF source power at a first duty cycle to react with the vaporizedprecursor to deposit an SiNHx film onto a substrate supported on asubstrate support disposed in the processing volume; supplying a firstprocess gas from the remote plasma source while providing RF bias powerat a second duty cycle different from the first duty cycle to thesubstrate support to convert the SiNH_(x), film to an SiOx film;supplying a process gas mixture formed from a second process gassupplied from the remote plasma source and a third process gas suppliedfrom the gas supply while providing RF bias power at the second dutycycle to the substrate support; and annealing the substrate.
 2. Themethod of claim 1, wherein the first duty cycle is about 10% to about100%, and wherein the second duty cycle is about .1% to about 20%, andwherein an on time of the second duty cycle has pulsing frequency ofabout 1 Hz to about 20 Hz.
 3. The method of claim 1, wherein annealingthe substrate comprises heating the substrate to a temperature of about500° C.
 4. The method of claim 1, further comprising simultaneouslyproviding the RF source power and the RF bias power to a showerhead andto the substrate support, respectively.
 5. The method of claim 1,further comprising sequentially providing the RF source power and the RFbias power in a closed looped gas process scheme.
 6. The method of claim1, further comprising rotating the substrate support,
 7. The method ofclaim 1, further comprising maintaining a temperature of the substrateat about −20° C. to about 90° C. while supplying the activated elements.8. The method of claim 1, further comprising maintaining a pressure ofabout 10 mTorr to 5 Torr while supplying the activated elements.
 9. Themethod of claim 1, wherein the processing chamber is a plasma-enhancedchemical vapor deposition chamber.
 10. The method of claim 1, whereinthe RF source power is about 100 W, and wherein the RF bias power isabout 500 W to about 2500 W.
 11. The method of claim 1, whereinsupplying the activated elements from the remote plasma source comprisessupplying at least one of ammonia radicals, H₂ radicals, or argon ions.12. The method of claim 1, wherein supplying the first process gascomprises supplying oxide. 13, The method of claim 1, wherein supplyingthe second process gas and the third process gas comprises supplyingargon and helium, respectively.
 14. The method of claim 1, whereinsupplying the vaporized precursor comprises supplying trisilylamine. 15.A non-transitory computer readable storage medium having stored thereoninstructions that when executed by a processor perform a method forprocessing a substrate, comprising: supplying a vaporized precursor froma gas supply into a processing volume of a processing chamber; supplyingactivated elements including ions and radicals from a remote plasmasource; energizing the activated elements using RF source power at afirst duty cycle to react with the vaporized precursor to deposit anSINH_(x) film onto a substrate supported on a substrate support disposedin the processing volume; supplying a first process gas from the remoteplasma source while providing RF bias power at a second duty cycledifferent from the first duty cycle to the substrate support to convertthe SiNH_(x) film to an SiOx film; supplying a process gas mixtureformed from a second process gas supplied from the remote plasma sourceand a third process gas supplied from the gas supply while providing RFbias power at the second duty cycle to the substrate support; andannealing the substrate.
 16. The non-transitory computer readablestorage medium of claim 15, wherein the first duty cycle is about 10% toabout 100%, and wherein the second duty cycle is about .1% to about 20%,and wherein an on time of the second duty cycle has pulsing frequency ofabout 1 Hz to about 20 Hz.
 17. The non-transitory computer readablestorage medium of claim 15, wherein annealing the substrate comprisesheating the substrate to a temperature of about 500° C.
 18. Thenon-transitory computer readable storage medium of claim 15, furthercomprising simultaneously providing the RF source power and the RF biaspower to the remote plasma source and to the substrate support,respectively.
 19. The non-transitory computer readable storage medium ofclaim 15, further comprising sequentially providing the RF source powerand the RF bias power in a closed looped gas process scheme.
 20. Achemical vapor deposition chamber for processing a substrate,comprising: a substrate support disposed in a processing volume of thechemical vapor deposition chamber; a remote plasma source coupled to thechemical vapor deposition chamber and configured to provide activatedelements to a showerhead in the processing volume; an RF source powercoupled to the showerhead and configured to provide RF source power at afirst duty cycle; an RF bias power source coupled to the substratesupport and configured to provide RF bias power at a second duty cycledifferent from the first duty cycle to the substrate support: a gassupply coupled to the chemical vapor deposition chamber and configuredto supply process gas to the showerhead disposed in the processingvolume: and a controller configured to: supply a vaporized precursorfrom the gas supply into the processing volume of the chemical vapordeposition chamber; supply activated elements including ions andradicals from the remote plasma source; energize the activated elementsusing RF source power at the first duty cycle to react with thevaporized precursor to deposit an SiNH_(x) film onto a substratesupported on the substrate support disposed in the processing volume:supply a first process gas from the remote plasma source while providingRF bias power at the second duty cycle to the substrate support toconvert the SiNH_(x), film to an SiOx film, supply a process gas mixtureformed from a second process gas supplied from the remote plasma sourceand a third process gas supplied from the gas supply while providing RFbias power at the second duty cycle to the substrate support; and annealthe substrate.